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首页> 外文期刊>CERAMICS INTERNATIONAL >Influence of Sb doping on structure, domain size, and piezoelectric properties of Pb0.99Nb0.02[(Sn0.30Zr0.70)(0.52)Ti-0.48](0.98)O-3 ceramics
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Influence of Sb doping on structure, domain size, and piezoelectric properties of Pb0.99Nb0.02[(Sn0.30Zr0.70)(0.52)Ti-0.48](0.98)O-3 ceramics

机译:Sb掺杂对PB0.99NB0.02 [(SN0.30ZR0.70)(0.52)Ti-0.48](0.98)O-3陶瓷的结构,结构域尺寸和压电性能的影响

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摘要

Effects of Sb doping on microstructure and electrical properties of Pb0.99Nb0.02[(Sn0.30Zr0.70)(0.52)Ti-0.48](0.98)O-3 (PNSZT) ceramics have been systematically investigated. Experimental results reveal that Sb cations can be successfully incorporated into PNSZT lattice by substituting B-site cations, which leads to the formation of Pb vacancies, enhances the relaxation of Sb-doped PNSZT ceramics and decreases domain size. Hence, piezoelectric response of Sb-doped PNSZT ceramics is superior to pure PNSZT ceramics. Moreover, phase-field simulation is employed to verify successful doping of Sb ions and formation of polar nano-domains. Owing to Sb doping, high piezoelectric properties, such as d(33 )= 530 pC/N and k(p) = 0.63, have been achieved at Sb2O5 content of 0.8 wt %. Furthermore, detailed mechanism of improved piezoelectric response due to Sb doping is proposed. Current study presents novel route to enhance piezoelectric properties of PNSZT ceramics, which may be helpful to improve properties of similar materials in the future.
机译:Sb掺杂对PB0.99NB0.02 [(SN0.30ZR0.70)(0.52)TI-0.48](0.98)O-3(PNSZT)陶瓷的微观结构和电性能的影响。实验结果表明,通过替代B型位阳离子可以成功地将Sb阳离子成功地掺入PNSZT格子中,这导致PB空位的形成,增强了Sb掺杂的PNSZT陶瓷的弛豫并降低了域尺寸。因此,SB掺杂PNSZT陶瓷的压电响应优于纯PNSZT陶瓷。此外,采用相场模拟来验证Sb离子的成功掺杂和极性纳米结构域的形成。由于SB2O5含量为0.8wt%,因此在0.8wt%的Sb2O5含量下达到了高压电性能,例如D(33)= 530pc / n和k(p)= 0.63。此外,提出了由于Sb掺杂引起的改进压电响应的详细机制。目前的研究提供了提高PNSZT陶瓷压电性能的新途径,这可能有助于改善未来类似材料的性质。

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