Novel ridge-type InGaN MQW laser diodes fabricated by selective area re-growth on GaN substrates

摘要

A novel ridge structure fabricated by selective-area epitaxial growth is proposed for InGaN MQW laser diodes (LDs). This technique is capable of precisely controlling the active ridge width and height, thus enabling stable single transverse-mode operation. Together with a backside n-contact on a low-dislocation-density GaN substrate, this structure provides high productivity and performance for GaN-based blue-violet LDs. The LDs fabricated by this technique have achieved continuous-wave operation at more than 30 mW up to a temperature of 9O°C and have exhibited a stable fundamental transverse mode up to 40 mW over a range of ridge dimensions.