High optical coupling efficiency by double taper-type coupler structure towards III-V/Si hybrid photonic integration

摘要

The hybrid integration utilizing HI-V based active devices with Si-Photonics is very attractive to realize new-generation photonic integrated circuits (PICs) with a small-footprint, high-speed response, and low power dissipation. GaInAsP/ Silicon-On-Insulator (SOI) hybrid photonic integrations have been realized using N_2 plasma activated bonding (PAB) processes. In addition, high optical coupling efficiency between the InP-based active section and Si-waveguides is a key issue for the realization of high-performance photonic devices. High optical coupling efficiency between them of 86% was realized by using the i-line stepper lithography process.