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Complementary BAW oscillator for ultra-low power consumption and low phase noise

机译:互补的BAW振荡器,可实现超低功耗和低相位噪声

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摘要

A complementary cross coupled BAW parallel resonance oscillator offering ultra-low power consumption and a good phase noise performance is presented. The power consumption in this structure is 50% less than the classical NMOS based structure without any penalty in the phase noise performance. Rather, this structure serves to reduce the noise contribution of the biasing transistors at the output leading to a marginal improvement in thermal noise performance as compared to the NMOS based structure. Furthermore, the flicker noise upconversion of this complementary structure can be minimized by proper design considerations. The power consumption in case of such a complementary structure based oscillator (designed in 180nm CMOS process) employing a 2.497 GHz BAW resonator is around 675 μW for an amplitude of 300 mV with a phase noise of -140 dBc/Hz at 1 MHz offset.
机译:提出了一种互补的交叉耦合的BAW并联谐振振荡器,它具有超低功耗和良好的相位噪声性能。这种结构的功耗比传统的基于NMOS的结构低50%,而不会降低相位噪声性能。而是,与基于NMOS的结构相比,该结构用于减小输出处的偏置晶体管的噪声贡献,从而导致热噪声性能的边缘改善。此外,可以通过适当的设计考虑来最小化该互补结构的闪烁噪声上转换。在这种采用2.497 GHz BAW谐振器的基于互补结构的振荡器(以180nm CMOS工艺设计)的情况下,功耗为675μW(振幅为300 mV,相位噪声为-140 dBc / Hz,偏移1 MHz)。

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