...
首页> 外文期刊>軽金属 >電解コンデンサ用高純度アルミニウム箔の表面組織とエッチング挙動
【24h】

電解コンデンサ用高純度アルミニウム箔の表面組織とエッチング挙動

机译:电解电容器高纯铝箔的表面组织及蚀刻行为

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Microstructure of high purity Al foils as high temperature rolled and annealed for electrolytic capacitors was analyzed mainly by transmission electron microscopy. Emphasis was on the dislocation microstructure near the foil surface covered with oxide films and also on the microstructure change along the depth from the surface of the foils. The results were discussed in reference to the etching behavior of the foils. As it goes from the surface to the foil thickness of about 10 mu m, dislocation structure changes from relatively random to cellular. The dislocation density and the cell-forming tendency increased with cold rolling to 50 percent reduction. Surface of the foils was examined by AFM to be wavy, with ridges extending parallel to the rolling marks at intervals of 2 to 4 mu m. It was also revealed by TEM that band areas with high densities of dislocations and also of oxide particles extended, underneath the oxide layer, along the rolling marks. A larger number of initial-pits were formed by etching along the band areas, suggesting that the areas had acted as preferential nucleation sites for pits. By a prolonged etching, deep tunnel-pits were formed at the sites corresponding to a single dislocation or the aggregates of dislocations. Rolling the foils to 20 percent reduction prior to etching resulted in increased density and in decreased average size of the pits. This suggests that density of etch pits in the foils could be controlled by controlling the processing conditions before etching.
机译:通过透射电子显微镜分析高纯度铝箔作为电解电容器的高温轧制和退火的微观结构。强调在覆盖有氧化膜的箔表面附近的位错微观结构上,并且还沿着箔表面的深度进行微观结构变化。参考箔的蚀刻行为讨论了结果。由于它从表面到约10μm的箔厚度,所以位错结构从相对随机到细胞变化。脱位密度和细胞形成趋势随着冷轧至50%的减少而增加。通过AFM检查箔的表面,致力波浪,脊平行于2至4μm的间隔平行于滚动标记延伸。它还通过TEM揭示了具有高密度的带状区域和延伸在氧化物层下方的氧化物颗粒,沿着滚动标记。通过沿频带区域蚀刻形成更多数量的初始凹坑,表明该区域充当了凹坑的优先成核位置。通过长时间的蚀刻,在对应于单一位错或脱位的聚集体的位点处形成深部隧道坑。在蚀刻之前将箔片滚动至20%,导致密度增加,并且凹坑的平均尺寸下降。这表明可以通过在蚀刻之前控制处理条件来控制箔中的蚀刻凹坑的密度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号