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電解コンデンサ用高純度アルミニウム箔の表面組織とエッチング挙動

机译:电解电容器用高纯铝箔的表面结构和腐蚀行为

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摘要

Microstructure of high purity Al foils as high temperature rolled and annealed for electrolytic capacitors was analyzed mainly by transmission electron microscopy. Emphasis was on the dislocation microstructure near the foil surface covered with oxide films and also on the microstructure change along the depth from the surface of the foils. The results were discussed in reference to the etching behavior of the foils. As it goes from the surface to the foil thickness of about 10 mu m, dislocation structure changes from relatively random to cellular. The dislocation density and the cell-forming tendency increased with cold rolling to 50 percent reduction. Surface of the foils was examined by AFM to be wavy, with ridges extending parallel to the rolling marks at intervals of 2 to 4 mu m. It was also revealed by TEM that band areas with high densities of dislocations and also of oxide particles extended, underneath the oxide layer, along the rolling marks. A larger number of initial-pits were formed by etching along the band areas, suggesting that the areas had acted as preferential nucleation sites for pits. By a prolonged etching, deep tunnel-pits were formed at the sites corresponding to a single dislocation or the aggregates of dislocations. Rolling the foils to 20 percent reduction prior to etching resulted in increased density and in decreased average size of the pits. This suggests that density of etch pits in the foils could be controlled by controlling the processing conditions before etching.
机译:主要通过透射电子显微镜分析了电解电容器经高温轧制和退火后的高纯度铝箔的显微组织。重点在于覆盖有氧化膜的箔表面附近的位错微结构,以及沿距箔表面深度的微结构变化。参考箔的蚀刻行为讨论了结果。当它从表面到约10微米的箔厚度时,位错结构从相对无规变为蜂窝状。随着冷轧,位错密度和泡孔形成趋势增加至减少50%。箔的表面通过AFM检查为波浪形,脊平行于轧制痕迹以2至4μm的间隔延伸。 TEM还显示出,具有高密度的位错的带状区域以及氧化物颗粒的带状区域沿着滚动痕迹在氧化物层下方延伸。沿着带状区域的蚀刻形成了大量的初始凹坑,表明该区域已成为凹坑的优先成核位点。通过长时间的蚀刻,在对应于单个位错或位错聚集体的位置处形成了深的隧道坑。在蚀刻之前将箔辊轧至减少20%的比例会导致密度增加和凹坑的平均尺寸减小。这表明可以通过控制蚀刻前的处理条件来控制箔中的蚀刻坑的密度。

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