Preparation of AlN films as insulation gap layers for MR heads by magnetron sputtering enhanced with an inductively coupled rf plasma

摘要

AlN films for use as insulative gap layers for MRor GMR heads were prepared by magnetron sputtering enhancedwith an inductively coupled rf plasma at various substratetemperatures. AlN films deposited on substrates at roomtemperature were found to have amorphous structure and topossess poor corrosion resistance to hot water. On the other hand,AlN films prepared on 200 deg C substrates were crystallized tosome extent and displayed good corrosion resistance. All the AlNfilms, regardless of the substrate temperature, behaved asinsulators. The breakdown electric fields of the AlN films wereall about 0.6 GV/m and leakage currents were about 10~(-8)A/mm~2 (10V). The AlN films prepared at 200 deg C concludedto be suitable for application in MR and GMR heads.