Development of ultraviolet AlGaN photodiodes (2)- properties of the responsivity in vacuum ultraviolet region

摘要

As the finer and higher integrated semiconductor technologies progress, the shorter exposure light sources for lithograph to satisiy more demanding requirements have been developed. Nowadays, KrF excimer lasers (5.0 eV, λ = 248 nm) are widely operated in many mass production lines of lithography. Manufacturing lines utilizing ArF excimer lasers (6.5 eV, λ = 193 nm) are also becoming available. As the next generation technology, lithograph systems using F2 lasers (7.9 eV, λ = 157 nm) or Extreme Ultraviolet (EUV 95 eV, λ = 13 nm) as their light source are now being developed at many R & D centers. As for the ultraviolet light photodetector, Si (Silicon) based photodiode sensors have been widely accepted regardless of their insufficiency such as requirement of visible - cut - filters or vulnerability to high energy ultraviolet light exposure. In this report, we introduce AlGaN based photodiode and its responsivity properties in the vacuum ultraviolet region (λ<200 nm). The responsivity measurements were carried out by using synchrotron radiation launched from UVSOR.