The InP-HEMT IC technology for 40-Gbit/s optical communications

摘要

The InP-HEMT IC technology is outlined. This technology realize the integration of 0.1 um gate length HEMTs, vertical diodes, capacitors and WSiN resistors with two level interconnections. The InP-HEMT degradation mode is investigated. The increase in Rd is the critical condition for 100 C use. InAlP-CSL (carrier supply layer)-HEMTs have 100 times longer lifetime than the usual InAlAs-CSL-HEMTs. This HEMT lifetime is 10{sup}7 hours at 100°C. This technology realizes 43 Gbit/s operating SSIs and MSIs with practical yield, successfully.