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Diamond deposition on large-area-substrate by hot-filament CVD using a straight-TaC-filament

机译:使用直线细丝的热灯丝CVD在大面积基板上的金刚石沉积

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Diamond was deposited on a large-area substrate (SiAlON: 100×30×5 mm, deposition surface: 100×30 mm) by hot-filament CVD with using a straight 140 mm-long TaC filament under H{sub}2-3%CH{sub}4 at 25 Torr for 130 min, and the morphology, quality and thickness of the film were examined by SEM and Raman spectroscopy. No tension was applied to the filament during heating up to 2600°C for diamond deposition and no visible deformation of the filament after deposition was observed. The deposited film showed the clear facet and Raman peak of diamond all over the deposition surface. Uniformity of film thickness is good in the longitudinal direction of the filament but poor in the transverse direction. Deposition rates were about 4μm/h at the center nearest the filament and about 1 μm/h at the edge farthest from the filament.
机译:通过在H {sub} 2-3下使用直线CVD,在大面积基板(SiAlon:100×30×5mm,沉积面:100×30mm)上沉积在大面积基板(SiAlon:100×30×5mm,沉积表面:100×30mm)上沉积 通过SEM和拉曼光谱检查25托的25托的%CH {Sub} 4,以及膜的形态,质量和厚度。 在加热期间没有将张力施加到长丝期间,对于金刚石沉积,并且在观察到沉积后没有明显的丝状变形。 沉积的薄膜在沉积表面上显示出颗粒的清晰面和拉曼峰。 薄膜厚度的均匀性在长丝的纵向方向上良好,但在横向方向上差。 沉积速率在最接近灯丝的中心处约为4μm/ h,并且在距离灯丝最远的边缘约1μm/ h。

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