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Synthesis of Au-Decorated V2O5@ZnO Heteronanostructures and Enhanced Plasmonic Photocatalytic Activity

机译:Au修饰的V2O5 @ ZnO异质纳米结构的合成及增强的等离子光催化活性

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摘要

A ternary plasmonic photocatalyst consisting of Au- decorated V2O5@ZnO heteronanorods was successfully fabricated by an innovative four-step process: thermal evaporation of ZnO powders, CVD of intermediate on ZnO, solution deposition of Au NPs, and final thermal oxidization. SEM, TEM, EDX, XPS, and XRD analyses revealed that the interior cores and exterior shells of the as-prepared heteronanorods were single-crystal wurtzite-type ZnO and polycrystalline orthorhombic V2O5, respectively, with a large quantity of Au NPs inlaid in the V2O5 shell. The optical properties of the ternary photocatalyst were investigated in detail and compared with those of bare ZnO and V2O5@ZnO. UV—vis absorption spectra of ZnO, V2O5@ZnO, and Au-decorated V2O5@ ZnO showed gradually enhanced absorption in the visible region. In addition, gradually decreased emission intensity was also observed in the photoluminescence (PL) spectra, revealing enhanced charge separation efficiency. Because of these excellent qualities, the photocatalytic behavior of the ternary photocatalyst was studied in the photodegradation of methylene blue under UV—vis irradiation, which showed an enhanced photodegradation rate nearly 7 times higher than that of bare ZnO and nearly 3 times higher than that of V2O5@ZnO, mainly owing to the enlarged light absorption region, the effective electron—hole separation at the V2O5—ZnO and V2O5-Au interfaces, and strong localization of plasmonic near-field effects.
机译:通过创新的四步工艺成功地制备了由金修饰的V2O5 @ ZnO杂多纳米晶组成的三元等离子体激元光催化剂:ZnO粉末的热蒸发,ZnO上的中间体CVD,Au NP的溶液沉积以及最终的热氧化。 SEM,TEM,EDX,XPS和XRD分析表明,所制备的杂纳米棒的内芯和外壳分别为纤锌矿型ZnO和多晶正交V2O5,并在其内嵌有大量Au NP。 V2O5外壳。详细研究了三元光催化剂的光学性质,并与裸露的ZnO和V2O5 @ ZnO进行了比较。 ZnO,V2O5 @ ZnO和金装饰的V2O5 @ ZnO的紫外可见吸收光谱显示在可见光区域吸收逐渐增强。此外,在光致发光(PL)光谱中还观察到逐渐降低的发射强度,从而显示出增强的电荷分离效率。由于这些优良的品质,研究了三元光催化剂在紫外可见光降解亚甲基蓝中的光催化行为,其光降解速率比裸露的ZnO高近7倍,比裸露的ZnO高近3倍。 V2O5 @ ZnO,主要是由于扩大了光吸收区域,V2O5-ZnO和V2O5-Au界面处有效的电子-空穴分离以及等离激元近场效应的强局部化。

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