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Versatile Particle-Based Route to Engineer Vertically Aligned Silicon Nanowire Arrays and Nanoscale Pores

机译:基于多功能粒子的路线可设计垂直对准的硅纳米线阵列和纳米孔

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Control over particle self-assembly is a prerequisite for the colloidal templating of lithographical etching masks to define nanostructures. This work integrates and combines for the first time bottom-up and top-down approaches, namely, particle self-assembly at liquid liquid interfaces and metal-assisted chemical etching, to generate vertically aligned silicon nanowire (VA-SiNW) arrays and, alternatively, arrays of nanoscale pores in a silicon wafer. Of particular importance, and in contrast to current techniques, including conventional colloidal lithography, this approach provides excellent control over the nanowire or pore etching site locations and decouples nanowire or pore diameter and spacing. The spacing between pores or nanowires is tuned by adjusting the specific area of the particles at the liquid liquid interface before deposition. Hence, the process enables fast and low-cost fabrication of ordered nanostructures in silicon and can be easily scaled up. We demonstrate that the fabricated VA-SiNW arrays can be used as in vitro transfection platforms for transfecting human primary cells.
机译:粒子自组装的控制是光刻刻蚀掩模的胶体模板以定义纳米结构的先决条件。这项工作首次整合并结合了自下而上和自上而下的方法,即在液-液界面处进行粒子自组装和金属辅助化学蚀刻,以生成垂直排列的硅纳米线(VA-SiNW)阵列,或者硅晶片中的纳米孔阵列。特别重要的是,与当前的技术(包括常规的胶体光刻技术)相比,此方法可对纳米线或孔刻蚀位置进行出色的控制,并使纳米线或孔径和间距解耦。孔或纳米线之间的间距通过在沉积之前调节液-液界面处的颗粒的比面积来调节。因此,该方法能够在硅中快速且低成本地制造有序纳米结构,并且可以容易地按比例放大。我们证明了制造的VA-SiNW阵列可以用作体外转染平台,用于转染人原代细胞。

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