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Achieving Type I, II, and III Heterojunctions Using Functionalized MXene

机译:使用功能化的MXene实现I,II和III型异质结

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In the present work, type I, II, and III heterostructures are constructed with the same base material using three representative functionalized monolayer scandium carbides (Sc2CF2, Sc2C(OH)(2), and Sc2CO2) by first-principles calculations based on density functional theory. In contrast to general bilayer heterosystems composed of two-dimensional semiconductors, type I and III heterojunctions are obtained in one Sc2CF2/Sc2CO2 system and the remains of the functionalized Sc2C heterostructures, respectively. It is noteworthy that the same monolayer Sc2CF2 and Sc2CO2 constituents lead to dissimilar heterostructure types in the two Sc2CF2/Sc2CO2 systems by modifying the stacking interface. In addition, in the two Sc2CF2/Sc2CO2 systems, remarkable changes in the heterojunction type are induced by a strain, and two distinct type-II heterostructures are generated where one layer with the conduction band minimum state and the other layer including the valence band maximum level are different. The present work suggests an attractive direction to obtain all heterostructure types with the same base material for novel nanodevices in various fields such as photonics, electronics, and optoelectronics using only the two monolayer components Sc2CF2 and Sc2CO2.
机译:在本工作中,通过基于密度泛函的第一性原理计算,使用三个代表性的功能化单层碳化scan(Sc2CF2,Sc2C(OH)(2)和Sc2CO2),使用相同的基础材料构造I,II和III型异质结构理论。与由二维半导体组成的一般双层异质系统相反,在一个Sc2CF2 / Sc2CO2系统中以及在剩余的功能化Sc2C异质结构中分别获得了I型和III型异质结。值得注意的是,相同的单层Sc2CF2和Sc2CO2成分会通过修改堆叠界面在两个Sc2CF2 / Sc2CO2系统中导致不同的异质结构类型。此外,在两个Sc2CF2 / Sc2CO2系统中,应变引起异质结类型的显着变化,并生成两个截然不同的II型异质结构,其中一层的导带最小,另一层的价带最大。级别不同。本工作提出了一个诱人的方向,即仅使用两个单层组件Sc2CF2和Sc2CO2,就可以在光子学,电子学和光电子学等各个领域中,使用具有相同基材的新型纳米器件来获得所有异质结构类型。

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