Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor

摘要

We demonstrate a new device that combines a light-field effect and an electrical-gate effect to control the drain current in a dual-gate transistor. We used two organic layers, photochromic spiropyran (SP)-doped poly- (triarylamine) (PTAA) and pristine PTAA, as top and bottom channels, respectively, connected to common source and drain electrodes. The application of voltage to the top and bottom gates modulated the drain current through each layer independently. UV irradiation suppressed the drain current through the top channel. The suppressed current was then maintained even after the UV light was turned off because of an optical memory effect induced by photoisomerization of SP. In contrast, UV irradiation did not change the drain current in the bottom channel. Our dual-gate transistor thus has two organic channels with distinct photosensitivities: an optically active SP- PTAA film and an optically inactive PTAA film. This device configuration allows multi-level switching via top- and bottom-gate electrical fields with an optical-memory effect.