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Strain-Induce Shift of the Crystal-Field Splitting of SrTiO3 Embedded in Scandate Multilayers

机译:嵌入Scandate多层膜中的SrTiO3晶体场分裂的应变诱导位移

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Strained SrTiO3 layers have become of interest, since the paraelectric-to-ferroelectric transition temperature can be increased to room temperature. A linear relationship between strain and energy splitting of the fundamental transitions in the fine structure of Ti L_(2,3) and O K edges is observed, that can be exploited to measure strain from electronic transitions, complementary to measuring local strain directly via highresolution transmission electron microscopy (HRTEM) images. In particular, for both methods, the geometrical phase analysis performed on high-resolution images and the measurement of the energy splitting by energy loss spectroscopy, tensile strain of SrTiO3 layers was measured when grown on DyScO3 and GdScO3 substrates. The effect ot strain on the electron loss near edge structure (ELNES) of the Ti L_(2,3) edge in comparison to unstrained samples is analyzed. Ab initio calculations of the Ti L_(2,3) and O K edge show a linear variation of the crystal field splitting with strain. Calculated and experimental values of the crystal field splitting show a very good agreement
机译:应变SrTiO3层已成为人们关注的问题,因为顺电-铁电转变温度可以提高到室温。观察到Ti L_(2,3)和OK边缘的精细结构中基本跃迁的应变与能量分裂之间存在线性关系,可以利用它来测量电子跃迁的应变,与通过高分辨率传输直接测量局部应变相辅相成电子显微镜(HRTEM)图像。尤其是,对于这两种方法,都在高分辨率图像上进行了几何相位分析,并通过能量损耗光谱法测量了能量分裂,测量了在DyScO3和GdScO3衬底上生长时SrTiO3层的拉伸应变。分析了与未应变样品相比,应变对Ti L_(2,3)边缘附近的电子损耗(ELNES)的影响。 Ti L_(2,3)和O K边缘的从头算计算表明,晶体场随应变分裂的线性变化。晶体场分裂的计算值和实验值显示出很好的一致性

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