High-Performance Bottom-Contact Organic Thin-Film Transistors Based on Benzo[d,d']thieno[3,2-b;4,5-b']dithiophenes (BTDTs) Derivatives

摘要

Three benzo[d,d']thieno[3,2-b;5-b']3dithiophene (BTDT) derivatives, end-functionalized with benzothiophenyl (BT-BTDT; 2), benzothieno[3,2-b]thiophenyl (BTT-BTDT; 3), and benzo[d,d' ]thieno[3,2-b;4,5-b']dithiophenyl (BBTDT; 4), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [~(2+)1 + 1] synthetic method of BTDT with improved synthetic yield was achieved, which enabled the efficient realization of new BTDT-based semiconductors. All of the BTDT compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm~2/(V s) and a current on/off ratio of 1 × 10~7, as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.