首页> 外文期刊>ACS applied materials & interfaces >Fabrication and Photoelectrochemical Characteristics of the Patterned CdS Microarrays on Indium Tin Oxide Substrates
【24h】

Fabrication and Photoelectrochemical Characteristics of the Patterned CdS Microarrays on Indium Tin Oxide Substrates

机译:铟锡氧化物基底上的图案化CdS芯片的制备和光电化学特性

获取原文
获取原文并翻译 | 示例
       

摘要

In an effort to investigate the extraordinary photoelectrochemical characteristics of nanostructured CdS thin films in promising photovoltaic device applications, the patterned CdS microarrays with different feature sizes (50, 130, and 250 μm in diameter) were successfully fabricated on indium tin oxide (ITO) glass substrates using the chemical bath deposition method. The ultraviolet lithography process was employed for fabricating patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) as the functional organic thin layer template. The results show that the regular and compact patterned CdS microarrays had been deposited onto ITO glass surfaces, with clear edges demarcating the boundaries between the patterned CdS region and substrate under an optimal depositing condition. The microarrays consisted of pure nanocrystalline CdS with average crystallite size of about 10.7 nm The photocurrent response and the optical adsorption of the patterned CdS microarray thin films increased with the decrease of the feature size, which was due to the increased CdS surface area, as well as the increased optical path length within the patterned CdS thin films, resulting from multiple reflection of incident light. The resistivity values increase with the increase of feature size, due to the increase of the relative amount of gaps between CdS microarrays with increasing the feature size of patterned CdS microarrays.
机译:为了研究在有前途的光伏器件应用中纳米结构CdS薄膜的非凡的光电化学特性,成功地在铟锡氧化物(ITO)玻璃上制作了具有不同特征尺寸(直径分别为50、130和250μm)的图案化CdS微阵列。基材使用化学浴沉积方法。紫外光刻工艺用于制造图案化的十八烷基三氯硅烷(OTS)自组装单层(SAMs)作为功能性有机薄层模板。结果表明,规则且紧凑的图案化CdS微阵列已经沉积在ITO玻璃表面上,在最佳沉积条件下,清晰的边缘划定了图案化CdS区与基板之间的边界。该微阵列由平均晶粒尺寸约为10.7 nm的纯纳米晶体CdS组成。图案化CdS微阵列薄膜的光电流响应和光学吸附随着特征尺寸的减小而增加,这也是由于CdS表面积增加所致。这是由于入射光的多次反射导致图案化的CdS薄膜内的光路长度增加所致。电阻率值随特征尺寸的增加而增加,这是由于CdS微阵列之间的相对间隙的数量随图案化CdS微阵列的特征尺寸的增加而增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号