Improvement in PbS-based Hybrid Bulk-Heterojunction Solar Cells through Band Alignment via Bismuth Doping in the Nanocrystals

摘要

We introduce dopants in lead sulfide (PbS) quantum dots (QDs) in forming hybrid bulk-heterojunction (BHJ) solar cells. Because an increase in the content of bismuth as dopants in PbS QDs transforms the intrinsic p-type semiconductor into an n-type one, the band alignment between a conjugated polymer and the doped QDs changes upon doping affecting performance of BHJ solar cells. From scanning tunneling spectroscopy (STS) of the doped QDs, we observe a shift in their Fermi energy leading to formation of a type II band alignment in the polymer:doped-QD interface. We also show that the dopants improve electron-conduction process through the QDs. With the dopants controlling both band alignments at the interface and the conduction process, we show that the dopant concentration in QDs influences open-circuit voltage unfavorably and short-circuit current in a beneficial manner. The device performance of hybrid BHJ solar cells is hence maximized at an optimum concentration of bismuth in PbS QDs.