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首页> 外文期刊>Journal of the Physical Society of Japan >Anomalous Transport Properties in BiS2-based Superconductors LnO(1-x),FxBiS2 (Ln = Nd, La-Sm)
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Anomalous Transport Properties in BiS2-based Superconductors LnO(1-x),FxBiS2 (Ln = Nd, La-Sm)

机译:基于BIS2的超导体LNO(1-X),FXBIS2(LN = ND,LA-SM)中的异常传输性能

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摘要

We report the electronic properties of the layered bismuth-based sulfide superconductors NdO1-xFxBiS2 (x = 0.25, 0.4, and 0.5) and La1-ySmyO0.5F0.5BiS2 (y = 0.1-0.7), which have been studied by investigation of their transport properties and X-ray diffraction. In the lightly carrier-doped NdO1-xFxBiS2 (x = 0.25 and 0.4) and La1-ySmyO0.5F0.5BiS2 (y = 0.3 and 0.4), the resistivity and Hall coefficient exhibit anomalous temperature dependences below T-CDW( )similar to 130 and 200 K, respectively, suggesting the formation of an energy gap on the Fermi surface associated with charge-density wave (CDW). In NdO1-xFxBiS2 (x = 0.25), the bond angles and bond lengths of the Bi-S pentahedron change their temperature dependences below similar to 200K, suggesting that a lattice instability related to the Bi-S pentahedron exists below similar to 200K, which is much higher than T-CDW. These results indicate that the lattice instability of the Bi-S pentahedron can trigger a CDW transition in the low-carrier region of BiS2 superconductors.
机译:我们报告了基于硫化物的硫化物超导体NDO1-XFXBIS 2的电子性质(x = 0.25,0.4和0.5)和La1-Ysmyo0.5f0.5bis2(y = 0.1-0.7),这已经通过调查了它们的研究运输性能和X射线衍射。在轻质载体掺杂的NDO1-XFxbis2(x = 0.25和0.4)和La1-Ysmyo0.5f0.5bis2(y = 0.3和0.4)中,电阻率和霍尔系数表现出低于t-cdw()的异常温度依赖性,类似于130分别为200 k,建议形成与电荷密度波(CDW)相关的费米表面上的能隙。在NDO1-XFXBIS2(X = 0.25)中,BI-S Pentahedron的键角和键长度改变其低于200k的温度依赖性,这表明与Bi-S Pentahedron相关的晶格不稳定性与200k类似,这远高于T-CDW。这些结果表明,Bi-S五边体的晶格不稳定性可以触发BIS2超导体的低载波区域中的CDW过渡。

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    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

    Hokkaido Univ Dept Phys Sapporo Hokkaido 0600810 Japan;

    Hokkaido Univ Dept Phys Sapporo Hokkaido 0600810 Japan;

    Hokkaido Univ Dept Phys Sapporo Hokkaido 0600810 Japan;

    Muroran Inst Technol Appl Phys Course Muroran Hokkaido 0508585 Japan;

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  • 正文语种 eng
  • 中图分类 物理学;
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