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首页> 外文期刊>Journal of the Physical Society of Japan >Theory of Weak-Field Magnetoresistance in Bilayer Graphene
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Theory of Weak-Field Magnetoresistance in Bilayer Graphene

机译:双层石墨烯弱场磁阻理论

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The magnetoconductivity, which is the correction to the diagonal conductivity proportional to the second power of magnetic-field strength, is calculated in bilayer graphene in the presence of scatterers with long-range potential such as a Gaussian potential and screened Coulomb potential in a self-consistent Born approximation. The magnetoresistivity in a usual Hall bar geometry exhibits prominent double-peak structure in the vicinity of zero energy and remains very small in other regions because of the cancellation with a counter term due to the Hall effect. In a constant broadening approximation, on the other hand, the magnetoresistivity becomes negative and has a sharp double-dip structure. These features are quite similar to those in monolayer graphene.
机译:磁导率,即校正与磁场强度的第二功率成比例的对角线导电,在双层石墨烯中计算在具有远程势的散射体的散射仪中,例如高斯潜在和筛选在自我中的筛选库仑势 一致的出生近似。 通常的霍尔杆几何形状中的磁阻率在零能量附近呈现出突出的双峰结构,并且由于霍尔效应,其他地区的其他地区仍然非常小。 另一方面,在恒定的展宽近似值中,磁阻变为负并具有尖锐的双浸结构。 这些特征与单层石墨烯中的功能非常相似。

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