Optimization by Numerical Simulation of the Active Layer's Thickness for Organic Thin Film Transistor

摘要

This paper reports the performance of a pentacene-based organic thin film transistor (OTFT) that was investigated using numerical simulations for different pentacene thicknesses. The studied OTFTs showed a peak mobility in the saturation region of 5 x 10 (-2) cm(2)V (-1)s (-1) for a pentacene thickness of 50 nm. Furthermore, an optimum I-on/I-off current ratio of 3.5 x 10(5) was observed for a similar pentacene thickness of about 50 nm. Moreover, the threshold voltage and the sub-threshold slope were significantly affected and decreased with increasing pentacene thickness. In addition, based on our proposed approach and the simulation results, we noticed that a penatcene thickness of 50 nm remained the optimum value for the active layer channel in order to obtain optimal performance from the OTFT devices.