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首页> 外文期刊>Journal of the European Ceramic Society >Growth orientation-related enhancement of electrical properties in (Na0.85K0.15)(0.5)Bi0.5TiO3-based composite films
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Growth orientation-related enhancement of electrical properties in (Na0.85K0.15)(0.5)Bi0.5TiO3-based composite films

机译:(Na0.85K0.15)(0.5)Bi0.5TiO3基复合膜中的增长取向相关性增强电性能

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TiO2-coated (Na0.85K0.15)(0.5)Bi0.5TiO3 (NKBT) composite films with thicknesses of 250 nm and 650 nm are synthesized on Pt(111)/Ti/SiO2/Si using an aqueous sol-gel method. X-ray diffraction (XRD) in omega-scan and psi-scan modes is performed to study the crystal orientation of the films. The electrical properties of the TiO2-coated NKBT composite films are investigated over a temperature range from -150 degrees C to 150 degrees C. Compared to films without the TiO2 layer, the TiO2-coated NKBT films exhibit enhanced electrical properties, higher temperature stability, and better endurance performance, which can be ascribed to the combined effects of the highly (100)-preferred orientation and improved degree of crystallization. The composite film in which TiO2 layers are attached on both sides of the 650 nm-thick NKBT film demonstrates the best ferroelectric performance with the highest remnant polarization (P-r) of 24.2( +/- 1.2) mu C/cm(2) under 750 kV/cm, the best piezoelectric performance with the highest effective piezoelectric constant (d(33)*) of 82( +/- 4) pm/V, and the best electric performance with the lowest leakage current density of 4.5 x 10(-6)( +/- 0.4 x 10(-6)) A/cm(2) at 20 V. Piezoresponse force microscopy (PFM) further confirms the enhanced ferroelectricity and domain switching of the TiO2 -coated composite films on a microscopic scale. In addition, the P-r values of the films increase gradually as the temperature decreases from 150 degrees C to-150 degrees C, while the d(33)* values exhibit the opposite trend, which is mainly attributed to the suppressed mobility of the domain walls at low temperatures.
机译:使用溶胶 - 凝胶法在Pt(111)/ Ti / SiO 2 / Si上合成TiO2涂覆(Na0.85K0.15)(0.5)Bi0.5TiO3(NKBT)复合薄膜。进行ω-扫描和PSI扫描模式中的X射线衍射(XRD)以研究薄膜的晶体取向。在-150℃至150摄氏度的温度范围内研究TiO2涂覆的NKBT复合膜的电性能。与没有TiO 2层的薄膜相比,TiO2涂覆的NKBT薄膜具有增强的电性能,更高的温度稳定性,并且更好的耐用性能,可以归因于高度(100)精度取向和改善的结晶程度的综合影响。其中TiO2层连接在650nm厚的NKBT薄膜两侧的复合膜,证明了最佳的铁电性能,最高偏振(PR)为24.2(+/- 1.2)mu c / cm(2)下方750 KV / CM,最佳的压电性能,具有82(+/- 4)PM / V的最高有效压电常数(D(33)*),以及最低漏电电流密度的最佳电气性能为4.5×10( - 6)(+/- 0.4×10(-6))A / cm(2)在20V.压电响应力显微镜(PFM)进一步证实了TiO2涂覆的复合膜的增强的铁电性和域切换在显微尺度上。另外,随着温度从150摄氏度降低到-150摄氏度,膜的PR值逐渐增加,而D(33)*值表现出相反的趋势,这主要归因于畴壁的抑制迁移率在低温下。

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