首页> 外文期刊>Journal of the European Ceramic Society >Enhanced piezoelectric and ferroelectric properties of BiFeO3-BaTiO3 leadfree ceramics by optimizing the sintering temperature and dwell time
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Enhanced piezoelectric and ferroelectric properties of BiFeO3-BaTiO3 leadfree ceramics by optimizing the sintering temperature and dwell time

机译:通过优化烧结温度和停留时间,增强BifeO3-Batio3引出陶瓷的压电和铁电性能

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摘要

0.7BiFeO(3)-0.3BaTiO(3) (BFO-O.3BT) ceramics were prepared to uncover the impacts of sintering temperature (T-s) and dwell time (t(d)) on the microstructure and electrical properties. With increasing the T-s or t(d), the grain sizes increase along with the porosity decreases, which is in favor of the alignment of dipole. However, excess T-s or t(d) are inclined to cause the volatilization of Bi2O3, which deteriorates piezoelectric properties. Because of the R-T two phase coexistence, low defect ions concentration and porosity, as well as appropriate grain size, the excellent d(33) = 208 pC/N and k(p) = 35.46% as well as P-r = 28.52 mu C/cm(2) were achieved in BFO-0.3BT ceramics at T-s = 1000 degrees C and t(d) = 6 h. In addition,large unipolar strain 0.13% and d(33)* = 256.2 pm/V also were obtained in BFO-0.3BT ceramics at T-s = 1000 degrees C and t(d) = 6h. This research indicates that the porosity and defect ion concentration as well as grain size also play an important role in piezoelectric properties in BFO-BT ceramics.
机译:制备0.7bifeo(3)-0.3batio(3)(bfo-o.3bt)陶瓷,以发现烧结温度(t-s)和停留时间(t(d))对微结构和电性能的影响。随着T-S或T(D)的增加,晶粒尺寸随着孔隙率而增加,这有利于偶极子的对准。然而,过量的T-S或T(D)倾向于引起Bi2O3的挥发,这会降低压电性能。由于RT两相共存,低缺损离子浓度和孔隙率,以及适当的晶粒尺寸,优异的D(33)= 208pc / n和k(p)= 35.46%以及Pr =28.52μc/在BFO-0.3BT陶瓷中在TS = 1000℃和T(d)= 6h中实现Cm(2)。此外,在T-S = 1000℃和T(D)= 6h的BFO-0.3BT陶瓷中,在BFO-0.3BT陶瓷中获得大的单极菌株0.13%和D(33)* =256.2μm/ v。该研究表明,孔隙率和缺陷离子浓度以及晶粒尺寸也在BFO-BT陶瓷中的压电性质中起重要作用。

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