Formation mechanism of highly [001](c) textured Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 relaxor ferroelectric ceramics with giant piezoelectricity

摘要

We investigated the synthesis mechanism and giant piezoelectricity of highly [0 0 1](c) textured Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PIN-PMN-PT) relaxor based ferroelectric ceramics (texture fraction similar to 94%) with BaTiO3 (BT) templates. The onset of texture occurred at similar to 88% relative density (RD), and rapid increase in texture fraction happened with RD >94%. A PbO-rich grain boundary liquid of similar to 6-13 nm thickness, detected at oriented crystalline interfaces, facilitated epitaxial nucleation and subsequent [0 01](PIN-PIVIN-PT)parallel to[0 01](BT) growth of textured grains on BT templates. Interfaces between BT templates and PIN-PMN-PT textured grains were found to be coherent and defect-free at the atomic scale, and there was almost no barium diffusion across the interfaces during the texturing process. Nanodomains were clearly visible in the oriented grains. [0 01](c) poling ordered the domain structures of textured ceramics and resulted in a more uniform domain size of several hundred nanometers. The textured ternary PIN-PMN-PT ceramics exhibited similar to 200% improvement in piezoelectric response relative to their random counterparts, as a result of their piezoelectric anisotropy and engineered domain status along with higher mobility of domain walls. (C) 2016 Elsevier Ltd. All rights reserved.