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Application of source biasing technique for energy efficient DECODER circuit design: memory array application

机译:源偏置技术在节能解码器电路设计中的应用:存储器阵列应用

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摘要

Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.
机译:研究人员提出了许多电路技术,以减少存储器单元中的泄漏功耗。如果我们希望减少内存系统中的整体电源,我们必须在内存架构的输入电路上工作,即行和列解码器。在本研究工作中,设计了具有高速行和存储阵列应用柱解码器的低漏电,提出了四种新技术。在这项工作中,设计和分析了集群解码器,身体偏置解码器,源极偏置解码器和源耦合解码器的比较,用于存储器阵列应用。使用Cadence工具对180nm GPDK技术文件进行不同解码器设计参数的比较分析进行仿真。仿真结果表明,所提出的源极偏置解码器电路技术在1.2V的电源电压下将漏电流降低99.92%,静电电流降低99.92%。提出的电路还提高了动态功耗5.69%,动态PDP / EDP 65.03%并在1.2 V电源电压下延迟57.25%。

著录项

  • 来源
    《Journal of Semiconductors》 |2018年第4期|共6页
  • 作者单位

    Department of Electronics and Telecommunication Engineering Institute of Engineering and Technology Devi Ahilya University Indore 452017 India;

    Department of Electronics and Telecommunication Engineering Institute of Engineering and Technology Devi Ahilya University Indore 452017 India;

    Department of Electronics and Telecommunication Engineering Institute of Engineering and Technology Devi Ahilya University Indore 452017 India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

    SRAM; leakage current; delay; SLEEP transistor;

    机译:SRAM;漏电流;延迟;睡眠晶体管;

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