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首页> 外文期刊>Journal of Superconductivity and Novel Magnetism >First-Principles Calculations of van der Waals and Spin Orbit Effects on the Two-Dimensional Topological Insulator Stanene and Stanene on Ge(111) Substrate
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First-Principles Calculations of van der Waals and Spin Orbit Effects on the Two-Dimensional Topological Insulator Stanene and Stanene on Ge(111) Substrate

机译:在GE(111)衬底上的二维拓扑绝缘体苯二烯和苯二甲酸纤维和旋转轨道效应的van der waals和旋转轨道效应的第一原理计算

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The structural and electronic properties of the monolayer and bilayer stanene structures have been studied using first-principles calculations. For the monolayer, the buckled structure is more stable than the flat one, with an opening of the band gap when spin-orbit coupling is taken into account, as mentioned in recent studies. For the bilayer, three types of stacking are considered: parallel layers, anti-parallel layers, and parallel layers where the first layer is shifted from the second one. These three configurations are named AA1, AA2, and AB, respectively. The two layers are separated by the distance d. The interactions between two layers of stanene are strong for a short distance, while the van der Waals bonding appears for a longer distance. Furthermore, stanene was fabricated experimentally on a substrate; thus, we proposed another study of electronic properties of stanene deposited on Ge(111) to reveal other behavior as a topological insulator and show the existence of the quantum spin Hall effect.
机译:已经研究了单层和双层苯二烯结构的结构和电子性质,使用了第一原理计算。对于单层,弯曲结构比平板更稳定,当考虑到旋转轨道耦合时,带隙的开口,如最近的研究所述。对于双层,考虑三种类型的堆叠:并行层,反平行层和并联层,其中第一层从第二个移位。这三种配置分别命名为AA1,AA2和AB。两层由距离d分开。两层芪的相互作用很小,短距离,而van der WaaS键合出现较长距离。此外,在实验上实验制造苯二烯;因此,我们提出了另一项研究沉积在Ge(111)上的斯坦宁的电子性质,以揭示作为拓扑绝缘体的其他行为,并显示出量子旋转霍尔效应的存在。

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