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Topological phase transitions in stanene and stanene-like systems by scaling the spin-orbit coupling

机译:通过缩放自旋轨道耦合,在类固烷和类固烷体系中进行拓扑相变

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We employ first-principles methods to study the topological properties of stanene and stanene-like materials by scaling stanene's natural intrinsic (atomic) spin-orbit-coupling (SOC) strength from 0 to 600%. Quantum phase transitions are observed in this two-dimensional system involving two different gaps. Stanene with zero SOC is a Dirac semimetal with a Dirac cone located at (K) over bar. An infinitesimal SOC opens up a gap at (K) over bar and the system becomes a two-dimensional topological insulator. Increasing the SOC to 333.3% causes the system to become a Dirac semimetal again with a Dirac cone located at (Gamma) over bar. Further increasing the SOC causes a gap opening at (Gamma) over bar, and the system becomes topologically trivial. This behavior is contrasted with that exhibited by three-dimensional topological insulators such as Bi2Se3, for which a strong SOC is a necessary but not a sufficient condition for the formation of topological phases. The similarities and differences are discussed. Copyright (C) EPLA, 2016
机译:我们采用第一原理方法,通过将stanene的自然本征(原子)自旋轨道耦合(SOC)强度从0%缩放到600%,来研究stanene和类stanene材料的拓扑特性。在涉及两个不同间隙的二维系统中观察到了量子相变。 SOC为零的Stanene是一种Dirac半金属,其Dirac锥位于棒上的(K)处。极小的SOC会在棒上的(K)处打开一个间隙,并且该系统成为二维拓扑绝缘体。 SOC增加到333.3%会使系统再次成为Dirac半金属,并且Dirac锥位于(Gamma)上方的棒上。 SOC的进一步增加会导致棒上的(Gamma)处出现间隙打开,并且该系统在拓扑上变得无关紧要。此行为与Bi2Se3等三维拓扑绝缘体所表现出的行为相反,对于Bi2Se3而言,强SOC是形成拓扑相的必要条件,但不是充分条件。讨论了异同。版权(C)EPLA,2016年

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