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首页> 外文期刊>Journal of Superconductivity and Novel Magnetism >High-T-C Superconductivity Originating from Interlayer Coulomb Coupling in Gate-Charged Twisted Bilayer Graphene Moire Superlattices
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High-T-C Superconductivity Originating from Interlayer Coulomb Coupling in Gate-Charged Twisted Bilayer Graphene Moire Superlattices

机译:源自栅极带钢双层石墨烯莫尔超晶片中的中间层库仑耦合的高T-C超导

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摘要

Unconventional superconductivity in bilayer graphene has been reported for twist angles theta near the first magic angle and charged electrostatically with holes near half filling of the lower flat bands. A maximum superconducting transition temperature T-C approximate to 1.7 K was reported for a device with theta = 1.05 degrees at ambient pressure and a maximum T-C approximate to 3.1 K for a device with theta = 1.27 degrees under 1.33 GPa hydrostatic pressure. A high-T-C model for the superconductivity is proposed herein, where pairing is mediated by Coulomb coupling between charges in the two graphene sheets. The expression derived for the optimal transition temperature, T-C0 = k(B)(-1)?(|n(opt) - n(0)|/2)(1/2)e(2)/zeta, is a function of mean bilayer separation distance zeta, measured gated charge areal densities n(opt) and n(0) corresponding to maximum T-C and superconductivity onset, respectively, and the length constant ? = 0.00747(2) angstrom. Based on existing experimental carrier densities and theoretical estimates for zeta, T-C0 = 1.94(4) K is calculated for the theta = 1.05 degrees ambient-pressure device and T-C0 = 3.02(3) K for the theta = 1.27 degrees pressurized device. Experimental mean-field transition temperatures T-C(mf) = 1.83(5) K and T-C(mf) = 2.86(5) K are determined by fitting superconducting fluctuation theory to resistance transition data for the ambient-pressure and pressurized devices, respectively; the theoretical results for T-C0 are in remarkable agreement with these experimental values. Corresponding Berezinskii-Kosterlitz-Thouless temperatures T-BKT of 0.96(3) K and 2.2(2) K are also determined and interpreted.
机译:据报道,双层石墨烯中的非常规超导率为扭曲角度Theta靠近第一魔角附近,并且用靠近下部扁平带的半填充的孔静电充电。在环境压力下具有Theta = 1.05度的器件,将最大超导转变温度T-C近似为1.7k,并且在1.33GPa静水压力下,最大T-C近似为3.1k = 1.27度。本文提出了一种用于超导性的高T-C模型,其中配对由两种石墨烯片中的电荷之间的库仑耦合介导。用于最佳转变温度的表达,T-C0 = K(b)( - 1)?(| N(OPT) - N(0)| / 2)(1/2)e(2)/ Zeta,是平均双层分离距离Zeta的功能,测量的栅极电荷面密度n(opt)和n(0)分别对应于最大Tc和超导电性发作,并且长度常数? = 0.00747(2)埃。基于Zeta的现有实验载流体密度和理论估计,为θ= 1.05度环境压力装置和T-C0 = 3.02(3)k计算T-C0 = 1.94(4)k的T-C0 = 1.94(4)k = 1.27度加压设备。实验式平均过渡温度T-C(MF)= 1.83(5)k和T-C(MF)= 2.86(5)k分别拟合超导波动理论分别对环境压力和加压装置的电阻过渡数据来确定; T-C0的理论结果与这些实验值显着。相应的Berezinskii-Kosterlitz-Thouslus温度T-BKT为0.96(3)k和2.2(2)k也被确定并解释。

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