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首页> 外文期刊>Journal of solid state electrochemistry >0.9Ni 0.1O 3 by employing impedance spectroscopy]]>
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0.9Ni 0.1O 3 by employing impedance spectroscopy]]>

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AbstractIn the present work, the effects of temperature and frequency on the ac electrical and dielectric properties of polycrystalline NdFe0.9Ni0.1O3, prepared by solid-state reaction method, are investigated. From the impedance spectroscopic measurements, three relaxation processes are observed, which are related to grains, grain boundaries and electrode-semiconductor contacts in the measured temperature and frequency range. For NdFe0.9Ni0.1O3sample, the applicable equivalent circuit model is (RgQg)(RgbQgb)(RcQc) in the measured temperature range. Decrease in resistances and relaxation times of the grains and grain boundaries with temperature confirm the involvement of thermally activated conduction mechanisms. With the increase in temperature, the relaxation frequencies increase for all three processes and the conduction mechanism changes from Mott variable range hole hopping to adiabatic small polaronic hole hopping in this material. The permittivity of grains is from 8 to 10, while the high permittivity observed at higher temperatures is extrinsic (due to Maxwell-Wagner type polarizations), which is primarily due to the formation of different Schottky barriers. The grain boundaries, ceramic surfaces and electrode-semiconductor contacts mainly contribute in the colossal value of permittivity of NdFe0.9Ni0.1O3. Theacconductivity plots show the positive values of the ‘dσ/dT’ which indicate that the charge carriers are localized. The results of conductivity signify that the delocalization of charge carriers augment with increase in the temperature in this system.]]>
机译:<![CDATA [<标题>抽象 ara ID =“PAR1”>在当前工作中,温度和频率对多晶NDFE <下标> 0.9 的AC电气和电介质特性的影响研究了通过固态反应方法制备的NI <下标> 0.1 O <下标> 3 。根据阻抗光谱测量,观察到三个松弛过程,其与测量的温度和频率范围内的晶粒,晶界和电极半导体触点有关。对于NDFE <下标> 0.9 NI <下标> 0.1 样本,适用的等效电路模型是(<强调类型=“斜体”> R g <重点类型=“斜体”> q g )(<重点类型=“斜体”> R GB <重点类型=“斜体”> q gb )(<重点类型=“斜体”> R C <重点类型=在测量的温度范围内,“斜体”> Q <下标> C )。降低晶粒的电阻和弛豫时间与温度的晶粒和晶界,确认了热激活的传导机构的累积。随着温度的增加,所有三个工艺的弛豫频率增加,传导机构从Mott可变范围跳跃到这种材料中的绝热小极化孔跳跃。晶粒的介电常数为8至10,而在较高温度下观察到的高介电常数是外在的(由于Maxwell-Wagner型偏振),其主要是由于形成不同的肖特基屏障的形成。晶界,陶瓷表面和电极半导体触点主要有助于NDFE <下标> 0.9 Ni <下标> 0.1 O <下标> 3 的巨大值。 <重点类型=“斜体”> AC 电导率图显示了'dσ/ d <重点类型=“斜体”> t '的正值,表示电荷载波是本地化的。电导率结果表示电荷载体的临床化随着该系统中的温度的增加而增强。]>

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