Surface-modification of Cu2O nanoparticles towards band-optimized hole-injection layers in CsPbBr3 perovskite light-emitting diodes

摘要

Herein, we have proposed a strategy to grow surface-modified cuprous oxide (Cu2O) nanoparticles as an efficient hole-injecting layer (HIL) in all-inorganic cesium lead bromide (CsPbBr3) perovskite light-emitting diodes (PeLEDs). Surface of the oxide nanoparticles was modified by different ligands (thiols or silane) which in turn tailored its conduction and valence band-edge energies. As evidenced from the density of states (DOS) spectra, such modification of band-edge energies tuned the band-alignment at the perovskite-HIL interface influencing the efficiency of the PeLEDs thereby. The device performance has been correlated with the band-diagram of the heterojunctions. The report hence provides a strategy to achieve a favorable band-alignment in perovskite-based heterojunctions for optoelectronic applications.