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Synergistic morphology control and non-radiative defect passivation using a crown ether for efficient perovskite light-emitting devices

机译:使用冠状醚的协同形态控制和非辐射缺陷钝化,用于高效的钙钛矿发光器件

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摘要

Controlling the nucleation process and forming small nanograins, as well as passivating defects at grain boundaries as the grain size becomes smaller, in one-step solution formed polycrystalline halide perovskites are of great importance for achieving efficient perovskite light-emitting diodes (PeLEDs). Here, a crown ether, 2-hydroxymethyl-12-crown-4 (HM12C4), is adopted as an additive and its influence on the photophysical and electroluminescent properties of a PeLED was investigated. It is found that HM12C4 can not only suppress PbBr(6)octahedron agglomeration in the precursor but also improve the wettability of the hole transport layer, resulting in a smoother dense perovskite film with smaller polycrystallites. Moreover, the retained HM12C4 in the perovskite film effectively passivated the defects at the grain boundaries and improved the photophysical and electroluminescent properties. Consequently, significantly enhanced electroluminescent performance was achieved with a low turn-on voltage of 2.3 V, a current efficiency of 17.2 cd A(-1), and an external quantum efficiency of 4.52%. Our findings reveal that crown ethers have great potential in exploiting high-performance PeLED, with significant implications for the further development of PeLEDs.
机译:控制成核过程并形成小纳米甲基,以及晶界的钝化缺陷随着晶粒尺寸变小,在一步溶液中形成多晶卤化物钙酸盐对于实现有效的钙钛矿发光二极管(PELED)非常重要。这里,研究了冠醚,2-羟甲基-12-Crown-4(HM12C4)作为添加剂,并研究了对覆盆子的光学和电致发光性质的影响。结果发现,HM12C4不仅可以抑制前体中的PBBR(6)八面体凝聚,而且还改善了空穴传输层的润湿性,导致具有较小多晶硅的更光滑的致密钙钛矿膜。此外,钙钛矿膜中的保留HM12C4有效地钝化了晶界的缺陷并改善了光学和电致发光性质。因此,通过低导通电压为2.3V,电流效率为17.2℃(-1),外部量子效率为4.52%,实现显着增强的电致发光性能。我们的调查结果表明,皇冠醚在利用高性能封面方面具有很大的潜力,具有显着的影响,对PELED的进一步发展。

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  • 作者单位

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Peoples R China;

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Tianjin Key Lab Elect Mat &

    Devices Sch Elect &

    Informat Engn 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Guangxi Univ Coll Chem &

    Chem Engn Nanning 530004 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
  • 关键词

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