首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Purification by SPS and formation of a unique 3D nanoscale network: the showcase of Ni-Cr-S
【24h】

Purification by SPS and formation of a unique 3D nanoscale network: the showcase of Ni-Cr-S

机译:通过SPS净化和唯一3D纳米级网络的形成:Ni-Cr-s的展示

获取原文
获取原文并翻译 | 示例
       

摘要

The occurrence of a unique 3D nanoscale network in Ni-Cr-S, treated via spark-plasma sintering, was discovered with a variety of ex situ and in situ TEM and XRD techniques. The starting material, consisting of a heterogeneous mixture of different phases, could be purified upon application of the sintering process. The obtained samples showed a network of chemically segregated domains being either Ni rich and Cr deficient or vice versa. These domains could be proven to intergrow fully coherently in 3D, thus establishing a unique microstructure. Electron beam irradiation caused the initial Cr3S4-type structures to transform into the disordered NiAs-type. The disordering is characterised by significant short-range ordering as indicated by the appearance of prominent diffuse scattering. Thermoelectric characterisation at room temperature indicated an n-type semiconductor behaviour with thermal and electrical conductivities similar to usual thermoelectric materials, however with a low Seebeck coefficient and a low power factor of 49.3 mW m(-1) K-2.
机译:通过Spark-浆烧结处理的NI-CR-S中的独特3D纳米级网络的发生,被各种EX原位和原位TEM和XRD技术发现。在施加烧结过程时可以纯化由不同相的异质混合物组成的原料。所获得的样品显示了化学隔离结构域的网络,其Ni富含Ni和Cr缺乏,反之亦然。可以证明这些域可以在3D中完全相互相干,从而建立独特的微观结构。电子束照射导致初始CR3S4型结构转化为无序的NIS型。该失调的特征在于,如突出漫射散射的外观所示的显着短距离排序。室温的热电表征指示具有类似于通常的热电材料的热和电导率的n型半导体行为,但是低塞匹克系数和49.3mw m(-1)k-2的低功率因数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号