首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >High efficiency and low efficiency roll-off hole-transporting layer-free solution-processed fluorescent NIR-OLEDs based on oligothiophene-benzothiadiazole derivatives
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High efficiency and low efficiency roll-off hole-transporting layer-free solution-processed fluorescent NIR-OLEDs based on oligothiophene-benzothiadiazole derivatives

机译:高效率和低效率的滚动空穴传输无基于寡核蛋白 - 苯并噻唑衍生物的无溶液加工荧光NIR-OLED

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摘要

We report on simple low band-gap D-A-D type chromophores comprising triphylamine as a donor and oligothiophene-benzothiadiazoles as an acceptor. In the solid state, they exhibited strong near-infrared (NIR) emission with high fluorescence quantum yield when doped in the CBP host and low lying HOMO levels suitable for hole-transporting NIR fluorescent emitters for organic light-emitting diodes (OLEDs). Simple hole-transporting layer free solution-processed double-layer OLEDs (ITO/PEDOT:PSS (40 nm)/EML (60 nm)/TPBi (35 nm)/LiF (0.5 nm):Al (150 nm)) demonstrated NIR emission (702-758 nm) with an excellent maximum EQE of 1.52%, low efficiency roll-off and high maximum radiance of 4463 mW Sr-1 m(-2), which is amongst the best performance for NIR-OLEDs based on organic fluorescent materials.
机译:我们报告了包含三胺作为供体和低噻吩 - 苯并噻唑作为受体的简单低带隙D-A-D型发色团。 在固态的状态下,当掺杂在CBP宿主和适用于有机发光二极管(OLED)的空穴输送NIR荧光发射器(OLED)中,它们表现出具有高荧光量子产率的强烈近红外(NIR)发射。 简单的空穴传输层免费溶液加工双层OLED(ITO / PEDOT:PSS(40nm)/ EML(60nm)/ TPBI(35nm)/ LIF(0.5nm):Al(150nm))显示NIR 发射(702-758nm)的最大值最高,效率低,效率低,最大辐射高4463 MW-1 m(-2),这是基于有机的NIR-OLED的最佳性能之一 荧光材料。

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