首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Thermoelectric performance enhancement of Cu2S by Se doping leading to a simultaneous power factor increase and thermal conductivity reduction
【24h】

Thermoelectric performance enhancement of Cu2S by Se doping leading to a simultaneous power factor increase and thermal conductivity reduction

机译:通过SE掺杂的Cu2S热电性能提高导致同时功率因数增加和导热率降低

获取原文
获取原文并翻译 | 示例
       

摘要

Copper sulfide is a promising thermoelectric (TE) material consisting of earth-abundant, low cost, and nontoxic elements, which recently has attracted increasing attention. In this work, a series of single-phased Cu2S1-xSex bulks were prepared by using mechanical alloying (MA) combined with spark plasma sintering (SPS). We found that Se doping could not only enhance the power factor (PF) of Cu2S by modifying the band structure, but also reduce the thermal conductivity (k) by generating point defects to intensify the phonon scattering. A peak ZT value of 0.74 was achieved at 723 K for the Cu2S0.9Se0.1 composition, resulting from a high PF = 260.5 mu W m(-1) K-2 and a low k = 0.25 W m(-1) K-1, which is 131% higher than that (0.32) of the pristine Cu2S. Our results suggest that the TE properties of Cu2S can be greatly enhanced by simultaneously increasing PF and decreasing k via doping a sole Se element.
机译:硫化铜是一种有前途的热电(TE)材料,包括土坯,低成本和无毒元素,最近引起了不断的关注。 在这项工作中,通过使用机械合金化(MA)与火花等离子体烧结(SPS)相结合制备一系列单相位的Cu2S1-XSex块。 我们发现SE掺杂不能通过修改带结构来增强CU2S的功率因数(PF),而是通过产生点缺陷来降低导热率(k)以加强声子散射。 在723k对于Cu2S0.9Se0.1组合物中以723k组合物实现0.74的峰值Zt值,由高PF =260.5μmWm(-1)k-2和低k =0.25μm(-1)k -1,比原始Cu2s的(0.32)高131%。 我们的结果表明,通过同时增加PF和通过掺杂鞋底元件,可以大大提高Cu2S的TE性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号