Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

摘要

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on the relative energy levels of the TMDs against those of the chromophore molecules.