首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Improved charge transport in fused-ring bridged hemi-isoindigo-based small molecules by incorporating a thiophene unit for solution-processed organic field-effect transistors
【24h】

Improved charge transport in fused-ring bridged hemi-isoindigo-based small molecules by incorporating a thiophene unit for solution-processed organic field-effect transistors

机译:通过掺入用于溶液加工的有机场效应晶体管的噻吩单元,改善熔融环桥桥桥桥的小分子的电荷传输

获取原文
获取原文并翻译 | 示例
       

摘要

Two acceptor-donor-acceptor small molecules based on a fused ring indacenodithieno[3,2-b]thiophene (IDTT) as a donor, and hemi-isoindigo units, methyleneoxindole (IDTT-MI) and thienylmethyleneoxindole (IDTT-T-MI) as acceptors were synthesized and characterized for application in solution-processed organic field-effect transistors. The incorporation of a thiophene bridge which extended the conjugation of the backbone maintained highly co-planar structures, and also endowed the small molecule with ordered crystalline structures and interconnected morphology. Consequently, IDTT-T-MI-based organic field-effect transistors exhibited a highest hole mobility of 0.80 cm(2) V-1 s(-1), which was the highest mobility for solution-processed hemi-isoindigo-based organic semiconductor materials.
机译:基于熔融环的受体 - 体供体 - 受体小分子[3,2-B]噻吩(IDTT)作为供体,Hemi-Isoindigo单位,亚甲基芳吲哚(IDTT-MI)和噻吩基亚甲基芳吲哚(IDTT-T-MI) 作为受体被合成并表征在溶液处理的有机场效应晶体管中的应用。 结合噻吩桥,该桥梁延伸了骨干的缀合保持高度平面结构,并且还赋予了具有有序晶体结构和相互连接的形态的小分子。 因此,IDTT-T-MI基有机场效应晶体管表现出0.80cm(2)V-1 s(-1)的最高空穴迁移率,这是溶液加工半岛的有机半导体的最高迁移率 材料。

著录项

  • 来源
  • 作者单位

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Sungkyunkwan Univ SKKU Dept Nano Engn Suwon 16419 South Korea;

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Hefei Univ Technol Acad Optoelect Technol Special Display &

    Imaging Technol Innovat Ctr Anh State Key Lab Adv Display Technol Hefei 230009 Peoples R China;

    Pohang Univ Sci &

    Technol Dept Chem Engn Pohang 37673 South Korea;

    Hefei Univ Technol Sch Chem &

    Chem Engn Key Lab Adv Funct Mat &

    Devices Anhui Prov Hefei 23009 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号