首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens
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UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens

机译:具有由三苯胺基聚集诱导的发射光学性的掺杂有机聚合物驻极体组成的UV感测有机光晶体器存储器件

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This paper reports a UV-sensing organic field-effect phototransistor with a stacked pentacene channel and a doped aggregation-enhanced emission (AIE)-fluorescent electret for potential applications, such as photomemory storage and photodetectors. It is found that the emission of the photoirradiated doped electret (PA-SMX and PI-SMX) layer can be manipulated at various doping levels, which can be further absorbed by the photoactive pentacene channel. These photogenerated excitons can be separated, and the electrons can be trapped into the electret layer in the presence of gate voltage bias. Therefore, the photoinduced programming and electric field-driven erasing effects of the designed memory device based on doped electrets exhibit optimal photomemory performance with a memory window (MW) of 37.2 V and a reliable retention time over 10 000 s with good cyclic endurance. The photodetection can also be modulated by the illumination power intensity, which reflects a photosensitivity (S) of 1.92 x 10(6) and a photoresponsivity (R) of 45 A W-1 for organic phototransistors with the PI-SM5 doped electret at a photoexcitation intensity of 720 mu W cm(-2) at 365 nm. The photoresponse following the change in the threshold voltage and photocurrent correlate well with the spectroscopic results and provide further understanding and optimization of organic phototransistor memory devices.
机译:本文报道了具有堆叠五烯通道的UV感测有机场效应光转换器和用于潜在应用的堆叠的五烯通道和掺杂聚集增强的发射(AIE) - 荧光驻极体,​​例如光学储存和光电探测器。发现光照射掺杂驻件(PA-SMX和PI-SMX)层的发射可以在各种掺杂水平下操纵,其可以通过光活性五烯通道进一步吸收。可以分离这些光发生的激子,并且电子可以在栅极电压偏压存在下捕获到驻极体层中。因此,基于掺杂电器的设计存储器件的光诱导的编程和电场驱动擦除效果具有37.2V的存储窗口(MW)的最佳光学性能,并且具有超过10 000秒的可靠保留时间,具有良好的循环耐久性。光电检测也可以通过照明功率强度调制,其反射1.92×10(6)的光敏性和用于有机光电晶体管的光敏性(R),其中有机光电晶体管在A处具有PI-SM5掺杂件365nm处的720μm(-2)的光屏蔽强度。阈值电压和光电流变化的光响应与光谱结果很好地相关,并提供有机光电晶体管存储器件的进一步理解和优化。

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