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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Low-temperature cross-linking of polyethyleneimine ethoxylated using silane coupling agents to obtain stable electron injection layers in solution-processed organic light-emitting devices
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Low-temperature cross-linking of polyethyleneimine ethoxylated using silane coupling agents to obtain stable electron injection layers in solution-processed organic light-emitting devices

机译:使用硅烷偶联剂的聚乙烯亚胺乙氧基化合物的低温交联,以获得溶液加工有机发光器件中的稳定电子注入层

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摘要

This study investigates low-temperature cross-linking of polyethyleneimine ethoxylated (PEIE) using four types of silane coupling agents, including trimethyl[3-(trimethoxysilyl) propyl] ammonium chloride (TTSPAC), trimethoxyphenylsilane (TMPS), trimethoxy[3-(phenylamino) propyl] silane (TPAPS) and 1,2-bis(trimethoxysilyl) ethane (BTMSE). The results of this study indicated that all the silane coupling agents reacted with PEIE at low temperatures ranging from 65 to 120 degrees C. The reacted PEIE exhibited solvent tolerance, indicating the cross-linking of PEIE. The cross-linked PEIE films were applied to electron injection layers (EILs) in solution-processed organic light-emitting devices. The device with PEIE: TTSPAC EIL showed a shorter device lifetime than that with only PEIE EIL. The shorter device lifetimes were attributed to the migration of chloride anions of TTSPAC. Conversely, the devices with PEIE: TMPS, TPAPS and BTMSE EILs, which did not contain mobile ions, had longer device lifetimes than that with only PEIE EIL. These results suggested that these improvements of device stability resulted from the cross-linking of PEIE.
机译:本研究研究了使用四种硅烷偶联剂的聚乙烯亚胺乙氧基化(PEIE)的低温交联(PEIE),包括三甲基[3-(三甲氧基甲硅烷基)丙基氯化铵(TTSPAC),三甲氧基苯基硅烷(TMP),三甲氧基[3-(苯氨基)丙基]硅烷(TPAPS)和1,2-双(三甲氧基甲硅烷基)乙烷(BTMSE)。该研究的结果表明,所有硅烷偶联剂在低温下与PEIE反应,低温范围为65至120℃。反应的PEIE表现出溶剂耐受性,表明PEIE的交联。将交联的PEIE膜施加到溶液加工的有机发光器件中的电子注入层(EIL)。具有PEIE的设备:TTSPAC EIL显示器寿命较短,只有仅用佩伊埃利尔。较短的设备寿命归因于TTSPAC的氯化物阴离子的迁移。相反,具有佩迪:TMPS,TPAPS和BTMSE EIL的设备,没有含有移动离子,其寿命比仅有佩伊埃尔的寿命更长。这些结果表明,这些改进的器件稳定性是由佩伊的交联引起的。

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