首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >SrCdSnQ(4) (Q = S and Se): infrared nonlinear optical chalcogenides with mixed NLO-active and synergetic distorted motifs
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SrCdSnQ(4) (Q = S and Se): infrared nonlinear optical chalcogenides with mixed NLO-active and synergetic distorted motifs

机译:SRCDSNQ(4)(Q = S和SE):红外线非线性光学硫代硫磷酸,混合NLO-活性和协同扭曲的图案

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摘要

Two new infrared (IR) nonlinear optical (NLO) chalcogenides, SrCdSnQ(4) (Q = S and Se) (1 and 2), were obtained by mixing NLO-active metal chalcogenides and d(10) metal tetrahedral motifs in an alkali metal-containing system. Their structures are constructed with edge- and corner-sharing CdQ(4) and SnQ(4) (Q = S and Se) units to form two-dimensional (CdSnQ(4))(2-) layers, between which are embedded with Sr2+. Compounds 1 and 2 have moderate band gaps of 2.05 and 1.54 eV, respectively. They exhibit strong second-harmonic generation intensities that are comparable to that of the benchmark AgGaS2 using a 2040 nm laser. Furthermore, their laser-induced damage thresholds are 10 and 5 times higher than that of AgGaS2, respectively. The strong NLO efficiency of these two compounds can be ascribed to SnQ(4) tetrahedra with a synergetic enhancement in the large distortion of CdQ(4) tetrahedra, shedding light on the exploration of new IR NLO materials with mixed NLO-active and synergetic distorted motifs.
机译:通过在碱中混合NLO-活性金属硫族化合物和D(10)金属四面体基序,得到两种新的红外线(IR)非线性光学(NLO)硫族化合物,SRCDSNQ(4)(Q = S和SE)(1和2)。含金属的系统。它们的结构由边缘和角落共享CDQ(4)和SNQ(4)(Q = S和SE)单元构成,以形成二维(CDSNQ(4))(2-)层,其嵌入其中SR2 +。化合物1和2分别具有2.05和1.54eV的中等带间隙。它们表现出使用2040nm激光的基准AGGAS2的强度二次谐波产生强度。此外,它们的激光诱导的损伤阈值分别比AGGAS2的损伤阈值高10%和5倍。这两种化合物的强烈NLO效率可以归因于SNQ(4)四面体,在CDQ(4)Tetrahedra的大扭曲中,脱落光线探测新的IR NLO材料,用混合NLO活性和协同扭曲主题。

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    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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