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Highly compact and smooth all-inorganic perovskite films for low threshold amplified spontaneous emission from additive-assisted solution processing

机译:高度紧凑且光滑的全无机钙钛矿薄膜用于低阈值扩增添加剂辅助溶液加工的自发排放

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摘要

Solution-processed perovskites have shown great potential for coherent light emission, i.e. lasing, owing to their high optical gain and tunable gain profile over a broad range. For all-inorganic perovskite films, however, morphology-control is still a challenge to suppress the optical loss. Herein, we report a facile one-step solution-based approach to grow CsPbX3 (X = Br and I) perovskite films with a pinhole-free and ultra-smooth surface, by incorporating long-chain octylammonium halide as an additive. The addition of octylammonium halide hardly affects the Auger recombination rate under high excitation. The optimal perovskite films exhibit roughness less than 2 nm and low scattering loss. These merits facilitate wavelength tunable amplified spontaneous emission (ASE) with a low threshold of 14.9 mu J cm(-2) and a high net gain coefficient of 380 cm(-1).
机译:解决方案处理后的Perovskites已经显示出相干光发射的巨大潜力,即激光,由于它们的高光学增益和可调增益轮廓在宽范围内。 然而,对于全无机钙钛矿薄膜,形态学控制仍然是抑制光学损失的挑战。 在此,我们通过将长链辛泛卤化物作为添加剂,报告了一种基于CSPBX3(X = BR和I)钙钛矿薄膜的基于CSPBX3(X = BR和I)钙钛矿膜。 在高激发下,加入氧化辛鎓卤化物几乎不会影响螺旋钻重组率。 最佳的钙钛矿薄膜表现出粗糙度小于2nm和低散射损失。 这些优点促进了具有14.9μm(-2)的低阈值的波长可调扩增的自发发射(ASE),并且高净增益系数为380cm(-1)。

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    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Dept Chem Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Dept Chem Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Dept Chem Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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