High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction

摘要

Investigating the charge transport behavior in one-dimensional quantum confined system such as the localized states and interference effects due to the nanoscale grain boundaries and merged domains in wide chemical vapor deposition graphene constriction is highly desirable since it would help to realize industrial graphene-based electronic device applications. Our data suggests a crossover from interference coherent transport to carriers flushing into grain boundaries and merged domains when increasing the current. Moreover, many-body fermionic carriers with disordered system in our case can be statistically described by mean-field Gross-Pitaevskii equation via a single wave function by means of the quantum hydrodynamic approximation. The novel numerical simulation method supports the experimental results and suggests that the extreme high barrier potential regions on graphene from the grain boundaries and merged domains can be strongly affected by additional hot charges. Such interesting results could pave the way for quantum transport device by supplying additional hot current to flood into the grain boundaries and merged domains in one-dimensional quantum confined CVD graphene, a great advantage for developing graphene-based coherent electronic devices.