Charge Transport Mechanism in Thick-Films of Surface Functionalized Silicon Nanocrystals

摘要

Thick-films of functionalized silicon nanocrystals with different thicknesses have been analysed in a purposed device architecture at room temperature. Commercially prepared silicon nanocrystals with a mean diameter of 60 nm have been utilized with a pre-treatment process followed by functionalization. Detail analysis of current density-voltage characteristics of the thick films (350-850 nm) of silicon nanocrystals at room temperature reveals that the drifting of charge carriers follows a power law relationship (J similar to V-n) in the presence of exponentially distributed trap states. Moreover, a unique voltage dependence of the current density-voltage curves also reveals a transaction between direct and spin-selective Fowler-Nordheim tunnelling mechanisms.