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首页> 外文期刊>Acta acustica united with acustica >Quantitative Ultrasonic Characterization of c-Axis Oriented Polycrystalline AlN Thin Film for Smart Device Application
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Quantitative Ultrasonic Characterization of c-Axis Oriented Polycrystalline AlN Thin Film for Smart Device Application

机译:面向智能设备应用的c轴取向多晶AlN薄膜的定量超声表征

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Generation of surface acoustic waves (SAW) on polycrystalline piezoelectric materials is gaining popularity due to possibility of manufacturing ultrathin film of such materials that have diverse applications, e.g. flow separation, particle guiding etc. It can be done by controlling the potential pattern in the electrodes placed on the surfaces of the thin film. Piezoelectric Aluminum Nitride (AIN) thin films have been used to fabricate a variety of radio frequency (RF) resonators and filters, contour mode resonators, bulk acoustic resonators and Lamb wave resonators. In this paper the polycrystalline AIN films for applications in high frequency SAW devices were prepared by rf-magnetron sputtering of a high purity aluminum target material in nitrogen atmosphere. Thickness of the film was 6.6 mu m with preferential c-axis orientation. However, for appropriate application of such film it is paramount to compute Lamb wave dispersion and the bulk wave angular dispersion relationship in AIN thin film nondestructively, which is the central goal of this paper. Such study is very scarce in the literature and was attempted in this paper using quantitative ultrasonic imaging and characterization (QUIC) technique. The surface dominated elastic modulus and hardness of AIN film were evaluated using QUIC and using nanoindentation, respectively. AIN film was evaluated at different depths using an acoustic microscope and the respective material signatures were recorded. The surface and bulk wave velocities in the film were calculated using QUIC method. These values were determined to be similar to 11065 m/s, similar to 6046 m/s and similar to 5545 m/s, for the longitudinal, transverse and surface acoustic waves, respectively. Subsequently to achieve our central goal, Lamb wave dispersion and bulk angular dispersion relationship were computed from the derived material properties and thickness of the AIN film, which can be used as an easy read out tool for the device manufacturing usage.
机译:由于可以制造具有多种用途的超薄膜,例如多晶压电材料,因此在多晶压电材料上产生表面声波(SAW)越来越受到欢迎。可以通过控制置于薄膜表面上的电极中的电势模式来完成。压电氮化铝(AIN)薄膜已用于制造各种射频(RF)谐振器和滤波器,轮廓模式谐振器,体声谐振器和Lamb波谐振器。本文通过在氮气氛下通过射频磁控溅射高纯度铝靶材制备用于高频声表面波器件的多晶AIN膜。膜的厚度为6.6μm,具有优选的c轴取向。然而,对于此类薄膜的适当应用,无损计算AIN薄膜中的Lamb波色散和体波角色散关系至关重要,这是本文的主要目标。此类研究在文献中非常稀缺,本文尝试使用定量超声成像和表征(QUIC)技术进行尝试。分别使用QUIC和纳米压痕评估AIN膜的表面主导弹性模量和硬度。使用声学显微镜在不同深度评估AIN膜,并记录各自的材料特征。使用QUIC方法计算膜中的表面和体波速度。对于纵向声波,横向声波和表面声波,这些值被确定为分别类似于11065 m / s,类似于6046 m / s和类似于5545 m / s。随后,为了达到我们的中心目标,从得出的AIN膜的材料特性和厚度计算出了Lamb波色散和体角色散关系,可以将其用作易于读取的工具,用于器件制造。

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