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Implementation of a system for metal contamination control based onclassification criteria

机译:基于基于金属污染控制的系统的实施

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Recent years have seen a diversification of materials that are used in micro-electronic devicefabrication. Initially, the materials were limited to silicon, silicon oxide and silicon nitride.ormetallization, aluminum was used. Metal silicides were introduced to lower contact resistance.Later, TiN barriers and W plugs were used, followed by copper metallization and low-x dielectrics.Currently the very heart of the memory cell and the transistor are being replaced by metallic oxidesand metal gate electrodes.While these materials improve device performance, they may also be detrimental contaminants ifthey are unintentionally present in sensitive device regions. Consequently, contamination controlhas become increasingly complex. Both substrate cleaning and contamination metrology face anexpanding range of contaminants and substrate materials. In addition, the specifications forallowable contaminant concentrations are being decreased continuously. In order to makecontamination control more manageable, common practice is to distinguish between groups ofcontaminants. The most common classification system for contaminants is based on the detection methods that areused. The following types of contamination are discerned: metallic contamination (usually detectedusing Total Reflection X-Ray Fluorescence, Inductively Coupled Plasma – Mass Spectrometry etc.),particle contamination (detected by light scatter tools), airborne molecular contamination (Ion MassSpectrometry, Capillary Electrophoresis), and organic contamination (Thermal Desorption – MassSpectrometry). Obviously, some contaminants may fall in more than one category. Therefore itshould be realized that a classification system is always artificial and a simplification of reality.For the control of metallic contamination in IMEC's pilot line, a dedicated classification system wasdeveloped. It allows the controlled introduction of new materials in an advanced researchenvironment, while minimizing the possible impact of contaminants.
机译:近年来已经看过多样化的材料,用于微型电子设备特性。最初,材料仅限于硅,氧化硅和氮化硅。型,使用铝。将金属硅化物引入较低的接触电阻。使用,使用锡屏障和W塞,然后进行铜金属化和低X电介质。蓄电池和晶体管的非常核心被金属氧化物和金属栅电极代替。虽然这些材料改善了装置性能,但如果敏感装置区域无意中存在,它们也可能是有害的污染物。因此,污染控制越来越复杂。衬底清洁和污染计量均面临污染物和衬底材料的伸展范围。此外,不允许污染浓度的规格连续降低。为了使控制更易于管理,常见做法是区分群体组。污染物最常见的分类系统是基于所捕获的检测方法。识别以下类型的污染:金属污染(通常检测到总反射X射线荧光,电感耦合等离子体质谱等。),颗粒污染(通过光散射工具检测),空气传播的分子污染(离子质谱,毛细管电泳)和有机污染(热解吸质谱仪)。显然,一些污染物可能属于一个以上的类别。因此,它应该意识到分类系统始终是人为的和现实的简化。对于IMEC的试验线中的金属污染,专用分类系统被逐步开发。它允许在高级研究环境中控制新材料的引入,同时最大限度地减少污染物可能的影响。

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