On Approach to Optimize Manufacturing of Bipolar Heterotransistors Framework Circuit of an Operational Amplifier to Increase Their Integration Rate. Influence Mismatch-Induced Stress

摘要

In this paper we introduce an approach to increase density of complimentary bipolar transistors framework a circuit of an operational amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of theheterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approachto analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.