On Approach to Optimize Manufacturing of a the Traditional Dynamic Type Domino Element to Increase Integration Rate of Their Elements

摘要

In this paper we introduce an approach to increase integration rate of field-effect transistors framework a the traditional dynamic type Domino element. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areasof the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits.