Improving resistive switching characteristics of polyimide-based volatile memory devices by introducing triphenylamine branched structures

摘要

Two novel solution-processable polyimide (PI-6FDA) and co-polyimide (CoPI-6FDA), with triphenylamin, (TPA)-derived structure as electron donor units and trifluoromethyl-containing phthalimide as electron accepto units, were designed and synthesized for polymer memory device application. The TPA branched structure wa introduced into the CoPI-6FDA to modify the performance of the polymer memory devices. Compared with PI 6FDA, CoPI-6FDA based memory devices exhibit better memory performance in lower threshold voltage o -3.1 V, higher ON/OFF current ratios of 10(5), and better operation stability and charge transfer complex sta bility. The effect of TPA branched structures on memory performance has been further explored by optoelec tronic measurements and theoretical calculation. Moreover, the optical and electrochemical measurements re veal the charge transfer mechanism of the CoPI-6FDA and PI-6FDA, which is related to the electrical bistability The introduction of TPA branched structures was proved as a suitable strategy to fabricate the polymer memor. devices with high performance.