Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

摘要

Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped diamond with metallic conductivity. However, currently available empirical studies are not fully satisfactory for enabling accurate determination of the boron concentration in diamond. Here, we study Raman spectra of epitaxial boron-doped diamond as a function of the boron concentration and the excitation wavelength. The zone center phonon and the phonon density of state maximum (at ca. 1200 cm(-1)) lines are analyzed using a decoupled double Fano-function. This analysis method accurately describes the observed variation of the asymmetric parameters with atomic boron concentration and the photon excitation energy and enables the determination of the atomic boron concentration from the parameters of the examined Raman lines.