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机译:使用硼植入边缘终端的钻石肖特基势垒二极管的击穿增强
Nanjing Elect Devices Inst Sci &
Technol Monolith Integrated Circuits &
Modu Nanjing 210016 Peoples R China;
Nanjing Elect Devices Inst Sci &
Technol Monolith Integrated Circuits &
Modu Nanjing 210016 Peoples R China;
Xi An Jiao Tong Univ Inst Wide Bandgap Semicond Xian 710049 Peoples R China;
Xi An Jiao Tong Univ Inst Wide Bandgap Semicond Xian 710049 Peoples R China;
Nanjing Elect Devices Inst Sci &
Technol Monolith Integrated Circuits &
Modu Nanjing 210016 Peoples R China;
Xi An Jiao Tong Univ Inst Wide Bandgap Semicond Xian 710049 Peoples R China;
Nanjing Elect Devices Inst Sci &
Technol Monolith Integrated Circuits &
Modu Nanjing 210016 Peoples R China;
Diamond; Schottky diode; Boron implant; Edge termination;
机译:使用硼植入边缘终端的钻石肖特基势垒二极管的击穿增强
机译:用于优化SiC肖特基势垒二极管击穿电压特性的边缘终端场板氧化物刻蚀角的研究
机译:用于优化SiC肖特基势垒二极管击穿电压特性的边缘终端场板氧化物刻蚀角的研究
机译:用AR +植入边缘终端和异质结P-NiO / N-SiC二极管的制造1.6 kV孔设计Ni / N-SiC肖特基势差二极管的综合比较
机译:薄纳米晶金刚石基肖特基势垒二极管和其他两个端子结构的电性能。
机译:具有氩注入边缘端接的高压β-Ga2O3肖特基二极管
机译:利用冲击电离系数表征金刚石肖特基势垒二极管的击穿行为
机译:合成硼掺杂金刚石上形成的高温点接触晶体管和肖特基二极管