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Roughness evolution during growth of hydrogenated tetrahedral amorphous carbon

机译:氢化四面体无定形碳生长期间的粗糙化进化

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摘要

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is advantageous as coating material for high-density magnetic and optical storage devices, due to its favorable combination of density and smoothness. An advantage of ta-C:H over tetrahedral amorphous carbon (ta-C) is the absence of macroparticles, often found in cathodic arc deposition of ta-C, and the hydrogen rich surface, compatible with the lubricant. As forta-C, in order to increase the magnetic storage density, the ta-C:H thickness needs to be decreased. It is thus necessary to determine the minimum thickness for continuous and pin-hole free films. Here we investigate the roughness evolution of ta-C:H by atomic force microscopy and determine the roughness and growth exponents alpha and beta. We find a very similar behaviour to ta-C, with the ta-C:H roughness slightly higher than the ta-C one for any given thickness. This confirms the smoothing effect of impinging ions during ta-C:H deposition.
机译:由于其密度和光滑度的有利组合,氢化四面体无定形碳(Ta-C:H)是用于高密度磁性和光学存储装置的涂层材料。 Ta-C:H对四面体无定形碳(TA-C)的优点是没有大颗粒,通常在TA-C的阴极弧沉积中发现,以及富氢表面,与润滑剂相容。 作为Forta-C,为了增加磁性存储密度,需要减小Ta-C:H厚度。 因此,需要确定连续和引脚无孔膜的最小厚度。 在这里,我们通过原子力显微镜检查Ta-C:H的粗糙度演变,并确定粗糙度和生长指数α和β。 我们发现对TA-C非常相似的行为,TA-C:H粗糙度略高于TA-C,对于任何给定的厚度。 这证实了在TA-C:H沉积期间撞击离子的平滑效果。

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